http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H1187648-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-50 |
| filingDate | 1997-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e99cf3d6f4cc4db9706a834a77db5b98 |
| publicationDate | 1999-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H1187648-A |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | (57) Abstract: In a DRAM, a capacitor element portion having a sufficient capacitance value with a good leakage current and a barrier metal layer having a low contact resistance are formed. SOLUTION: In the step of forming a plate electrode after forming a high dielectric constant capacitance insulating film such as a tantalum oxide film or a barium strontium titanate film, a shower electrode plate of a plasma chemical vapor deposition apparatus comprising parallel plates is used. The resulting high-purity metal is subjected to a nitriding plasma treatment using nitrogen, ammonia or the like to form a metal nitride thin film. Further, in forming the contact portion of the semiconductor device, at least the contact system is 0.5 μm or less and the aspect ratio is 2 μm or less. In the step of forming an ultra-fine contact portion composed of the above, a high-purity metal thin film intended for a shower electrode plate is formed by a plasma treatment using an inert gas, and is nitrided by a nitriding plasma treatment using nitrogen, ammonia, or the like. A metal thin film is formed. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114164492-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7208787-B2 |
| priorityDate | 1997-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 41.