| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 |
| filingDate |
1997-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_168cf616a2f4a6092ba1b48b2c4b2855 |
| publicationDate |
1999-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H1187451-A |
| titleOfInvention |
Semiconductor device inspection method and semiconductor device inspection device |
| abstract |
PROBLEM TO BE SOLVED: To perform a semiconductor device inspection using a current induced in a semiconductor by a beam and to cause a problem caused by a mechanical contact with a side of the substrate on which an element is formed. To prevent A charge is supplied by a charged beam (20). Carriers are generated by the laser beam 8 while supplying the supplied electric charges. The charged beam 20 can extract a current related to carrier generation without making mechanical contact with the surface of the silicon substrate 1. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100828505-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7476875-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4606443-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2004102643-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006093257-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6753524-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005347773-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7381978-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7473911-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008016858-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7279689-B2 |
| priorityDate |
1997-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |