http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H118384-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 1997-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1e8457fbfcebfc88965d50342f2ca93a |
| publicationDate | 1999-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H118384-A |
| titleOfInvention | Semiconductor device manufacturing method |
| abstract | (57) Abstract: When forming a compensation diffusion layer on a semiconductor substrate exposed through a connection hole opening, aggregation of metal silicide occurs, It is an object of the present invention to avoid a problem that a resistance value increases and to enable high integration of a high-speed semiconductor device using a low-resistance metal silicide such as titanium silicide. When a compensation diffusion layer is formed on a semiconductor substrate exposed by a connection hole opening, impurities are implanted by ion implantation at a background pressure of 1.3 × 10 −7 Pa or less after the connection hole opening etching. A method of manufacturing a semiconductor device in which a compensation diffusion layer is formed by performing a heat treatment at 600 ° C. or less, or by performing silicon epitaxial growth at a background pressure of 1.3 × 10 −7 Pa or less and a temperature of 600 ° C. or less. . |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010109379-A |
| priorityDate | 1997-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.