http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H1174260-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c0f8dc752059a228fada0efdcc2901b9 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G77-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate | 1997-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_51c47b340295a0d44d1c331e8ea2bd31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d7c42fb75b3ab5a33c35a183931f1f84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_55894e3c320ebc168512d06d3d0da0e0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3bcf14a57385219a0ac70c6dc5ab5cf1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c0b708160c0c226949c794f80e228b20 |
| publicationDate | 1999-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H1174260-A |
| titleOfInvention | Semiconductor device and manufacturing method thereof |
| abstract | PROBLEM TO BE SOLVED: To condense and dehydrate silanol groups at around normal pressure, prevent moisture absorption in an insulating thin film, and suppress corrosion of a conductive layer and deterioration of the function of the insulating thin film. Another object of the present invention is to provide a semiconductor device and a method of manufacturing the same in which a contact resistance between a lower wiring and an upper wiring in a multilayer wiring structure is prevented from increasing. SOLUTION: In a method of manufacturing a semiconductor device in which a wiring structure including at least one conductive layer is provided on a semiconductor substrate 1 with an interlayer insulating film 4 interposed therebetween, a hydrogen silsesquioxane resin is fired on the semiconductor substrate 1. Is formed, and the interlayer insulating film 4 is heat-treated at a temperature of 150 to 550 ° C. under a pressure of 1 to 1000 Torr. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009060007-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100817639-B1 |
| priorityDate | 1997-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 69.