http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H1173789-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-02
filingDate 1998-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2a578d92fc5bc66f14faed17a2d94c96
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1df34b4d1d815407cf016f22e220a0f7
publicationDate 1999-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H1173789-A
titleOfInvention Semiconductor nonvolatile memory
abstract [PROBLEMS] To provide a multi-value storage type nonvolatile storage device capable of minimizing an increase in circuit scale and realizing highly accurate writing, reading and erasing operations in a short time. SOLUTION: The threshold value of a memory cell is set to three or more levels, and the level of a word line is changed to two or more levels to read out a memory cell, so that two bits or more of data can be stored in one memory cell. In a nonvolatile memory device configured to store, binary data to be stored, a first external terminal supplied serially, it is possible to electrically change its threshold voltage, A plurality of memory cells that hold data as a value of a threshold voltage, and are coupled to the external terminal and the plurality of memory cells, and convert a plurality of serially supplied binary data to multivalued data. A means for writing to a memory cell is provided.
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priorityDate 1998-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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