| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L49-00 |
| filingDate |
1997-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e2d99062c6f2cbb27682f06f3f8e194c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf769ec77c1fcf41680d2c50402c165f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8ec4b5e85bf0cca5a9bf0e8a4266748d |
| publicationDate |
1999-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H1154755-A |
| titleOfInvention |
Semiconductor device manufacturing method and thin film transistor |
| abstract |
(57) [Summary] [PROBLEMS] To make the crystal grain size of a polycrystalline semiconductor film doped with an extremely low concentration of impurities uniform and to reduce a leak current. SOLUTION: An impurity-doped first semiconductor film 13 is provided. And an intrinsic second semiconductor film 14 are laminated and annealed by laser light to form a 5 × 1 A polycrystalline semiconductor film 15 containing a trace amount of impurities of about 0 16 to 3 × 10 17 cm −3 is formed. Such a semiconductor film has particularly improved back channel crystallinity, and when applied to a TFT, can control Vth within a range where there is no deterioration in characteristics, and can further reduce the off current of the TFT. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-03067666-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011081829-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009033120-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9030298-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005310131-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-100347862-C
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009111364-A |
| priorityDate |
1997-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |