http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H11514677-A
Outgoing Links
Predicate | Object |
---|---|
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F5-00 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F5-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01J27-125 |
filingDate | 1997-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 1999-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-H11514677-A |
titleOfInvention | Method for producing indium organochloride |
abstract | (57) [Summary]nA method for producing indium organochloride directly from molten metal is provided. Indium organochloride is formed by contacting an organochloride directly with a metal melt. A preferred method involves using indium as the metal and methyl chloride as the organochloride. The direct contact of methyl chloride with indium metal results in the production of dimethyl indium chloride or methyl indium dichloride depending on the contact time and process efficiency. The resulting product is suitable for use as a precursor gas for chemical vapor deposition (CVD). In addition, an active compound such as an oxide or halide is optionally added to the metal melt to increase the reaction rate. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10428089-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2021014459-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016536325-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10239892-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016532699-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10745421-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018505888-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017512827-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019178166-A |
priorityDate | 1996-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 75.