http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H11507182-A
Outgoing Links
Predicate | Object |
---|---|
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48464 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-641 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-167 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-64 |
filingDate | 1997-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 1999-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-H11507182-A |
titleOfInvention | Semiconductor integrated circuit |
abstract | (57) Abstract: An active layer formed between a first semiconductor region (4) of a first conductivity type and a second semiconductor region (5) of a second conductivity type on a semiconductor substrate (2). The present invention relates to a device (3) having a passive pn junction (6) and a semiconductor integrated circuit having a protection circuit attached to the device (3) for inducing overvoltage or electrostatic charging. A protection circuit (8) attached to the device (3) for inducing overvoltage or electrostatic charging is formed on the semiconductor support (7), and the semiconductor support region (10) of the first conductivity type and the second semiconductor support (7). A pn junction (9) for protection by the semiconductor support region (11) of the second conductivity type, and the second semiconductor support region (11) of the second conductivity type is provided in the semiconductor substrate (2). It is electrically connected to the formed first semiconductor support region (4) of the first conductivity type. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2007086345-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006228904-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9076928-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2019116981-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4697397-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7995636-B2 |
priorityDate | 1996-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.