http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H11505670-A

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filingDate 1996-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 1999-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H11505670-A
titleOfInvention Method for curing SOG film using electron beam radiation
abstract (57) Abstract: An electron beam exposure method is described which provides a means for curing an SOG formed on a semiconductor wafer, the method comprising the steps of: insulating a conductive metal layer in a process of manufacturing a multilayer integrated circuit; Is flattened. The method uses a large area and uniform electron beam exposure apparatus in a soft vacuum environment. A wafer coated with uncured siloxane SOG is irradiated by electrons having sufficient energy to penetrate the entire thickness of the SOG, while being heated by an infrared heater. The wafer is exposed to a predetermined dose of electrons and is simultaneously raised to a maximum temperature in a soft vacuum environment. Next, the electron beam and infrared heaters are turned off and the substrate is cooled until it is removed from the vacuum.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6746969-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003502845-A
priorityDate 1995-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 21.