| abstract |
(57) [Summary] In a light-transmitting electrode for a semiconductor light-emitting element, It is possible to stably realize a contact surface with improved ohmic properties and smaller contact resistance with improved electrical characteristics, and to stably and easily produce translucent electrodes at a wide range of heat treatment temperatures. Provided is a method for manufacturing a light-transmitting electrode. SOLUTION: The method for manufacturing a light-transmitting electrode for a light-emitting semiconductor element according to the present invention includes the steps of: forming at least one metal selected from Au, Pt, and Pd on a semiconductor surface; A first step of forming a metal thin film layer made of an alloy containing at least one metal selected from Sn, Cr, Co, Zn, Cu, Mg, and In; A second step of performing heat treatment in an atmosphere containing In particular, the semiconductor is a GaN-based compound semiconductor. |