http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H1140518-A

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filingDate 1997-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_408f1dc0e04ab4efb4d37325c937b69c
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publicationDate 1999-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H1140518-A
titleOfInvention Method of forming CVD-Ti film
abstract PROBLEM TO BE SOLVED: To provide a CV capable of forming a Ti film with high step coverage in a fine hole portion formed in an insulating film. To provide a method for forming a D-Ti film. SOLUTION: An interlayer insulating film having holes formed on a Si substrate or a Si film thereon has C When forming a VD-Ti film, S i substrate W is loaded, the inside of the chamber 1 is set to a predetermined reduced pressure atmosphere, and TiCl 4 gas, H 2 gas, Ar Gas is introduced, plasma is generated in the chamber, and T An i film is formed. At this time, the flow rate of the gas, the substrate temperature, the pressure in the chamber, and the input during the formation of the plasma are so set that the Ti film is formed in the hole portion with a high selectivity to the interlayer insulating film or the insulating film. Adjust power.
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6831010-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009141227-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002115068-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2349392-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9620370-B2
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6905962-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015124397-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015124398-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-5571270-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7737005-B2
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Total number of triples: 37.