| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_47cc435e1d443f13180f7766df104d9d |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24D3-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24D3-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 |
| filingDate |
1998-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af7f82027b7e2f7604608435dfb95bad
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_11feac31000987ba1d92fd3aaf0facae
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f5a31ef0c5860db5ddd0b58c5d8fcf83 |
| publicationDate |
1999-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H11347952-A |
| titleOfInvention |
Resin whetstone for polishing semiconductor wafer and method of manufacturing the same |
| abstract |
(57) [Summary] [PROBLEMS] Without using expensive slurry for abrasives, An object of the present invention is to provide a resin grindstone for polishing a semiconductor wafer, which can provide a polished surface free from scratches and has excellent flattening performance. The thermosetting resin having rubber elasticity is 5 to 20 watts. t-%, abrasive particles 80 to 92 wt% with a maximum particle size of 2.0 μm or less % As an essential component, and the compression elastic modulus of the molded product is 1000 The semiconductor wafer is polished using a resin grindstone of ８8000 kgf / cm 2. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-03101668-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011162402-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012516241-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011156648-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006241389-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011162364-A |
| priorityDate |
1998-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |