| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-58
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-02 |
| filingDate |
1998-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_142d21ea716930bd196a5dae9af5e924 |
| publicationDate |
1999-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H11343110-A |
| titleOfInvention |
Preparation method of clathrate compound thin film |
| abstract |
(57) [Problem] To provide a method of forming a clathrate compound thin film having a uniform film thickness with good film thickness controllability. An alkali metal deposited film is formed on a substrate made of a group IV element such as silicon and germanium, and an amorphous semiconductor film made of the same material as the material forming the substrate is formed thereon. Next, the substrate is subjected to a heat treatment in a rare gas atmosphere and then to a heat treatment in a vacuum. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007246326-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6797199-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013018679-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6461581-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012224488-A |
| priorityDate |
1998-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |