http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H11340426-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f187eb8cb31e70d4acd428dd8beedd4f |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822 |
| filingDate | 1999-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_05ac4ede1aafc70ddd42997df155391e |
| publicationDate | 1999-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H11340426-A |
| titleOfInvention | Semiconductor device and method of manufacturing semiconductor device |
| abstract | (57) Abstract: Provided is a semiconductor device having a low connection resistance between a silicon layer and a wiring layer while maintaining the function of a ferroelectric layer, and a method for manufacturing the same. SOLUTION: A metal layer 30 made of nickel, which is a metal that is silicided at a temperature lower than a temperature at which the ferroelectric layer FL loses ferroelectricity irreversibly, is partially formed on one upper surface of a source / drain region 26. It forms so that it may contact. Thereafter, the metal layer 30 is silicided by heating at a temperature equal to or lower than the temperature at which the ferroelectric layer FL irreversibly loses ferroelectricity, thereby forming a silicide layer 31. Therefore, the portion of the metal layer 30 that is in contact with the upper surface of the N + diffusion layer 26 can be sufficiently silicided without deteriorating the function of the ferroelectric layer FL. Nickel has a very low reduction catalytic action on the ferroelectric layer FL. Therefore, the metal layer 30 that has not been silicided does not adversely affect the ferroelectric layer FL in a later step. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100463243-B1 |
| priorityDate | 1998-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 66.