| abstract |
[PROBLEMS] To provide a transistor structure having high latch-up resistance and a method for manufacturing the same. A preferred structure and method reduces leakage and junction capacitance by using elevated sources and drains, partially separated from the substrate by a dielectric layer. The raised sources and drains are preferably made from the same layer of material used to form the transistor gate. A preferred method of fabricating the transistor is to precisely pattern the gate material layer in the gate, source, and drain regions with a hybrid resist. The source and drain regions are then connected to the substrate by silicon growth. Thus, an improved transistor structure is provided without requiring extra fabrication steps. |