http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H11330014-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_47cc435e1d443f13180f7766df104d9d |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09C1-68 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01F17-00 |
| filingDate | 1996-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a40bc1e2eff1521bbe3cf5ef7b763a75 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5c7a8c0f7d638e90547ad9a8c520a380 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a7c5a4942197a5b2ec492762ef03fcfa http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6f5ed6cb641a219c46e53c77176ae5e8 |
| publicationDate | 1999-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H11330014-A |
| titleOfInvention | Substrate polishing method |
| abstract | (57) Abstract: A substrate polishing method for selectively polishing an organic SOG film formed on a substrate and capable of global flattening, having good embedding properties between fine wires, and having a low dielectric constant. I will provide a. [Constitution] An organic SOG film in which the number of Si atoms derived from a siloxane bond and the number of C atoms derived from an alkyl group in an insulating film have a relationship of C atom / (Si atom + C atom) ≧ 0.1 Polishing is performed with a cerium oxide abrasive having a polishing rate of 10: 1 or more for a polishing rate for an organic SOG film and a SiO 2 film. [Effect] In the semiconductor substrate, almost no level difference occurs on the entire surface of each layer in each layer, so that it is possible to sufficiently cope with miniaturization of wiring, and to realize multilayer wiring by high density and high integration. |
| priorityDate | 1996-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 64.