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filingDate 1998-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cc0059d1ced53cafc91fc2d5ae1676f9
publicationDate 1999-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H11326090-A
titleOfInvention Thick film piezoresistor detection structure
abstract (57) [Problem] To provide a high-pressure sensor compatible with a medium, using a thick film strain detection structure. Therefore, diffusion of the glass frit component between the electric insulating layer and the thick-film piezoresistor is suppressed, and the performance of the sensor is improved. SOLUTION: The substrate (12), at least one electrical insulating layer (14) on the substrate (12), an interface layer (16) on the electrical insulating layer (14), and the interface layer (16) An upper thick film piezoresistor (18), said interface layer (16) having a composition comprising finely divided particulate alumina and particulate zinc oxide suspended in a glass matrix. The interface layer (16) separates the piezoresistor (18) from the electrical insulation layer (14) and the components in the electrical insulation layer (14) diffuse into the piezoresistor (18). This is a detection structure (10) for suppressing the above.
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