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filingDate 1998-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d811023591eea4a9e0831caffacf61dc
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publicationDate 1999-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H11316264-A
titleOfInvention Parallel test circuit for semiconductor devices
abstract (57) Abstract: In a parallel test mode, a leakage current capable of generating a data input pad other than a data input pad to which write data is typically applied is detected in a same test stage. Accordingly, a parallel test circuit for a semiconductor memory device that can reduce test time and cost is provided. SOLUTION: In a parallel test circuit of a semiconductor device, A plurality of data input pads, each of which is connected to the data input pads and receives a chip select signal during a normal operation, A plurality of data input buffers for receiving data applied through each data input pad, and switching means for electrically connecting all the data input pads according to a leakage test activation signal applied in a parallel test mode; And
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008065862-A
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