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publicationDate 1999-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H11310843-A
titleOfInvention Semiconductor device member and method of manufacturing the same
abstract PROBLEM TO BE SOLVED: To provide a highly heat-conductive and lightweight alloy having good thermal expansion coefficient matching with ceramics and the like, and a net shape after burning, and particularly suitable for high power devices. -To provide an inexpensive SiC-based sintered body. SOLUTION: SiC particles are contained in Al or Al alloy. It is an Al-SiC-based composite alloy which is dispersed in 0 to 70% by weight and has a uniform composition with the same component ratio between the surface and the inside. In particular, the SiC content is 60% by weight or more, and the thermal conductivity thereof is 200 W / m · K or more at 20 ° C. This composite alloy has a thermal expansion coefficient of 150 W / m · K or more at a temperature of 00 ° C. or more and a thermal expansion coefficient of 10 × 10 −6 / ° C. or less.
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016113696-A
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