| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1277 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate |
1999-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8d1d89c208fb2fe90cf9e5d70bf49684
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 |
| publicationDate |
1999-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H11307783-A |
| titleOfInvention |
Semiconductor device and manufacturing method thereof |
| abstract |
(57) [Problem] To provide a method for manufacturing a semiconductor thin film having high crystallinity. A first heat treatment (crystallization step) at 450 to 600 ° C. is performed with a germanium film 103 formed on an amorphous silicon film 102. Next, a second heat treatment is performed on the polysilicon film 104 obtained in this crystallization step at a temperature equal to or higher than the crystallization temperature (800 to 1,050 ° C.). By this step, the underlayer / silicon interface is fixed, and the polysilicon film 10 containing almost no defects in the crystal grains. 5 can be obtained. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6812493-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7307282-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6787807-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7368335-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6703265-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6690068-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6828587-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7034337-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6956235-B2 |
| priorityDate |
1998-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |