http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H11297138-A

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filingDate 1999-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1b46424745e589e5d433765dbfaa1995
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publicationDate 1999-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H11297138-A
titleOfInvention Method for forming transparent conductive film
abstract (57) [Problem] To provide a method for forming a transparent conductive film having high carrier density and high mobility and high electrical conductivity with good reproducibility and easily. SOLUTION: The method for forming a transparent conductive film has a region 1 having a high dopant concentration distributed in a fine pattern and an electron transfer region comprising a region 2 having a low dopant concentration around the region 1 having a high dopant concentration. The electron transfer region is formed by irradiating a transparent conductive film containing a dopant (for example, In 2 O 3 doped with Sn) with a laser beam.
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priorityDate 1998-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 27.