http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H11288775-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01R33-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
filingDate | 1998-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9e32c1fb74721cfb602592ff487baa3c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_15e4bff5463578b974096384ec328f2a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_da232fe8f438fa2738b5de869992199d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_24ae502883765161e139d7eb040bd0f5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_872e3256221aa92fa8edaf03ec126f3c |
publicationDate | 1999-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-H11288775-A |
titleOfInvention | Environmental test socket, environmental test apparatus, burn-in method, and semiconductor device |
abstract | (57) [Summary] [Problem] To accurately perform an environmental test and obtain a narrow pitch bump by obtaining accurate electrical continuity with an object to be inspected without generating a defect caused by a foreign substance. Manufactured semiconductor device at low cost. SOLUTION: In a socket for establishing electrical continuity with a semiconductor device in an environmental test device, a contact portion with a bump electrode on a semiconductor device side is connected to a land 5 formed on a flexible tape 1 made of an insulating resin or the like. The solder plating 4 covering the land 5 and the metal particles 3 held by the solder plating 4 And a plurality of plating layers 6 and plating layers 7 covering the metal particles 3 exposed from the solder plating 4 to prevent the metal particles 3 bonded to the bump electrodes on the semiconductor device from becoming foreign substances. The life of the land 5 is extended by preventing the metal particles 3 from being lost, and the electrical contact is reliably realized by the unevenness of the plating layers 6 and 7 reflecting the shape of the metal particles 3. |
priorityDate | 1998-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.