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filingDate 1998-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 1999-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H11284271-A
titleOfInvention Semiconductor laser and method of manufacturing the same
abstract (57) [Abstract] (with correction) [PROBLEMS] To provide a semiconductor laser with a multi-layer high-reflection film having high reliability, improved performance such as a low threshold value and a low operating current, and a method of manufacturing the same. SOLUTION: The multilayer high reflection film has a linear expansion coefficient within ± 30% of a linear expansion coefficient of the substrate of the semiconductor laser 201, and n1. A first low refractive index film 204 formed in contact with an end surface having a refractive index n1 of <1.8 and an optical film thickness of approximately λ / 4 with respect to the laser wavelength λ; n2> 1 A negative imaginary part −i of a refractive index n2 of 0.9 and a refractive index of k <0.05. k, a first high refractive index film 206 having an optical film thickness of about λ / 4 with respect to the laser wavelength λ, and n3 < A second low-refractive-index film 205 having a refractive index n3 that satisfies n1> n3, wherein the second low-refractive-index film 205 is different from the first low-refractive-index film. In addition, a plurality of first high-refractive-index films and second low-refractive-index films are alternately laminated, and the total number of layers is nine or less.
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