http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H11274129-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_06f6859e19dacec5a834168e491504b2 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 |
| filingDate | 1998-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b8ae6268001f15793d20fd358efad4a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_532da9dd8ce5385bae5c49b4cc2c56c1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1cdd8898dc39e92e5cf999a1ca81b467 |
| publicationDate | 1999-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H11274129-A |
| titleOfInvention | Semiconductor substrate cleaning method |
| abstract | PROBLEM TO BE SOLVED: To remove minute damage caused by processing of a semiconductor substrate and to remove organic substances, metal impurities and fine particles adhering to the surface of the semiconductor substrate satisfactorily in a small number of steps. A semiconductor substrate is washed with a mixed solution of hydrogen peroxide and ammonium hydroxide, and then rinsed with ultrapure water. The rinsed semiconductor substrate is cleaned with a cleaning liquid containing 0.0001% by weight or more of an organic acid or organic acid salt. This semiconductor substrate is washed with an oxidizing solution. The cleaning liquid preferably further contains 0.005 to 0.25% by weight of hydrofluoric acid in addition to the organic acid or the organic acid salt. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2000049133-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10474032-B2 |
| priorityDate | 1998-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 78.