http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H1126406-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
filingDate 1997-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2c677f51ac2a6677cdf80946b3241fba
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_35901b309140097fa1223cb5bc493d08
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publicationDate 1999-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H1126406-A
titleOfInvention Wafer grinding method
abstract (57) [Problem] To provide a wafer grinding method capable of manufacturing an extremely thin IC chip with high yield. SOLUTION: The wafer grinding method according to the present invention is characterized in that an energy ray-curable pressure-sensitive adhesive sheet is attached to a wafer surface on which a circuit is formed, and the pressure-sensitive adhesive layer is cured by irradiating an energy ray, and then the pressure-sensitive adhesive sheet is cured. Is characterized in that the back surface of the wafer is ground in a state in which is adhered to the front surface of the wafer.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2007148506-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016129577-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005051229-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011029450-A
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008098669-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4578165-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2000340636-A
priorityDate 1997-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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