| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_47cc435e1d443f13180f7766df104d9d |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D5-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 |
| filingDate |
1998-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb74075e021168ed01083436b57c4736
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0c5d3656f89ecaca6b56c048b46c5000
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9a7a413ddc6f47f0e1191dd8d8726c45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_58b9546f05539f96093c4b6bd982bb4f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_385b898b7aba34b1712e361b5a7925cc |
| publicationDate |
1999-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H11249309-A |
| titleOfInvention |
Electron beam positive resist and method of manufacturing photomask using the same |
| abstract |
(57) [Problem] To provide a method for manufacturing a high-resolution photomask at a high throughput by solving the problem that the pattern of a chemically amplified positive resist on a chromium oxide becomes skirted. A (a) alkali-soluble resin and (b) a compound which generates an acid upon irradiation with actinic radiation, and (c) three or more benzene rings, three or more hydroxyl groups, and one benzene ring A photomask substrate comprising a resist composition containing at least a compound in which a hydrogen atom of a hydroxyl group of a polyhydroxy compound having two or less hydroxyl groups is substituted with an acid-decomposable group at a ratio of 0.5 to 0.9 mol per hydrogen atom. After coating on the top and irradiating with electron beam, baking is performed. The substrate is developed with an alkaline aqueous solution to obtain a pattern. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006287236-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7288363-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005075767-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011090343-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7312016-B2 |
| priorityDate |
1998-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |