| abstract |
(57) Abstract: An interlayer insulating film has good workability, low relative dielectric constant, and high adhesion to an organic film, an oxide film, and a metal film. A first metal wiring on a semiconductor substrate is provided. 01, a first silicon nitride film 102, a first organic-containing silicon oxide film 103, and a second silicon nitride film 10 4. A second organic-containing silicon oxide film 105 is sequentially deposited. First and second organic-containing silicon oxide films 103, 1 05 is formed by a CVD method using a reactive gas containing phenyltrimethoxysilane as a main raw material, It has a structure in which a phenyl group bonded to a silicon atom is incorporated in silicon oxide. A second metal wiring 111 is formed on the second organic-containing silicon oxide film 105 and a contact 112 is formed on the first organic-containing silicon oxide film 103. |