| abstract |
An object of the present invention is to form a high-quality deposited film having a very uniform thickness and a uniform film quality on a large-sized substrate having an arbitrary shape, at a high speed, stably, and efficiently produce a semiconductor. It is an object of the present invention to provide a plasma CVD method and a plasma CVD apparatus for forming a device. Kind Code: A1 A reaction vessel that can be decompressed, a substrate holding means disposed in the reaction vessel, a source gas supply means for supplying a source gas for plasma CVD into the reaction vessel, and an oscillation frequency of 30 to 600 MHz by a high frequency power supply. High-frequency power supply means for supplying high-frequency power in a range to the plasma-generating high-frequency electrode, and exhaust means for exhausting gas after reaction in the reaction vessel, wherein the high-frequency power generated by the high-frequency power supply is supplied to the plasma. A high-frequency plasma CVD apparatus for supplying plasma to the high-frequency electrode for generation and generating plasma between the substrate held by the substrate holding means and the high-frequency electrode for plasma generation to form a deposited film on the substrate; The phase of the reflected power is adjusted on the high-frequency electrode at a portion opposite to the feeding point of the electrode. |