| abstract |
[PROBLEMS] To shorten the exposure wavelength (100 nm to 250 n) A halftone type phase shift mask and a phase shift mask blank which can correspond to m) are provided. In particular, the present invention provides a mask having a desired transmittance with respect to the inspection light wavelength and suitable for practical use. In a halftone type phase shift mask blank, for example, a semitransparent film (halftone phase shifter film) 2 contains silicon, nickel, and at least one selected from nitrogen, oxygen, and hydrogen. The relationship between silicon and nickel contained in the transparent film is represented by the following formula. (Equation 1) |