| abstract |
(57) [Abstract] (with correction) [PROBLEMS] To provide a thin semiconductor device by forming a gate electrode of a GTO into a multi-layer structure. In a GTO, an aluminum layer is provided on a portion where a P base layer is exposed on a surface of a semiconductor substrate. A multi-electrode 108 made of a four-layer metal of a titanium layer 102, a nickel layer 103, and a gold layer 104 is formed, and a gate lead 1 is formed on the surface of the multi-electrode via a solder 105. 3 are connected. [Effect] By directly bonding the gate pad, the conventional gate pressing mechanism becomes unnecessary, and the thickness of the GTO element can be reduced. |