http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H11214321-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B31-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-861
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G21G1-12
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filingDate 1998-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_88292effa3047c6b75b38fdc05c9da6a
publicationDate 1999-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H11214321-A
titleOfInvention Method of modifying diamond material and semiconductor device using diamond material modified by the method
abstract (57) [PROBLEMS] To improve semiconductor characteristics of a diamond material by light irradiation and to provide a semiconductor device having excellent characteristics. SOLUTION: In the method for modifying a diamond material according to the present invention, a diamond material containing a predetermined impurity atom is prepared, and at least one of core atoms of carbon atoms and impurity atoms contained in the diamond material can be excited. The method is characterized by irradiating high energy light to thereby improve the semiconductor characteristics of the diamond material.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7255744-B2
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006036564-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-100409408-C
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4635491-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006024602-A
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2005041279-A1
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priorityDate 1998-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 38.