http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H11212272-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-88
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26
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filingDate 1998-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_291e4d9e2eb0830f5ececd14d3ac8ae1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_05048a398adfd35aa8634ba9343c3f03
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publicationDate 1999-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H11212272-A
titleOfInvention Method for producing relief pattern, relief pattern for additive, relief pattern for barrier formation, relief pattern, and photosensitive element used for the production
abstract PROBLEM TO BE SOLVED: To provide a relief pattern excellent in chemical resistance and solvent resistance, suitable for an additive method, a leaf pattern for forming a barrier of a plasma display, and a relief pattern for producing a relief pattern with high yield. A manufacturing method and a photosensitive element are provided. SOLUTION: The ratio (b / a) a relief pattern in which a) is 0.5 to 1.0, the above-mentioned ratio (b / a) cut in a stripe-shaped plane perpendicular to the longitudinal direction Is 0.5 to 1.0, a relief pattern for additive, a relief pattern for barrier formation, and a light transmittance of 0.5 to 1.0. 40% of the photosensitive resin layer was imagewise exposed, and the ratio (b / a) a method for producing a relief pattern wherein a) is 0.5 to 1.0, and a photosensitive film comprising a support film and a photosensitive resin layer having a light transmittance of 0.5 to 40% at a wavelength showing the maximum absorption. Sex element.
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priorityDate 1998-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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