http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H11211662-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d6402b23ab8782152be47b3996e48a4a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N21-73 |
| filingDate | 1998-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b39ffa7cba53dd97b5e519e188f87f5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ef79810caa9764c0d6b733d30317d2ee |
| publicationDate | 1999-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H11211662-A |
| titleOfInvention | Rapid analysis of trace amounts of phosphorus in silicon materials |
| abstract | (57) [Summary] [Problem] A trace amount in a silicon material capable of quickly and quantitatively analyzing a trace amount of phosphorus in a silicon material such as a high-purity silicon material used for a solar cell, a semiconductor, and an electronic material in a short time. Providing a rapid analysis method for phosphorus. SOLUTION: A silicon material is directly inserted into a high-temperature plasma to excite and emit light, and the emission intensity of phosphorus is measured. From the emission intensity of the obtained phosphorus and a calibration curve obtained using a silicon sample with a known phosphorus concentration, determine the phosphorus concentration in the silicon material, or more preferably, the silicon material, It is directly inserted into a high-temperature plasma and excited to emit light, the emission intensity of phosphorus and silicon is measured, and the intensity ratio is obtained.The obtained intensity ratio and the phosphorus obtained by using a silicon sample whose phosphorus concentration is known are obtained. A rapid analysis method for a trace amount of phosphorus in a silicon material, wherein the phosphorus concentration in the silicon material is determined from a calibration curve representing a correlation between the emission intensity ratio of silicon and the phosphorus concentration. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006317371-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-5833256-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4506554-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014091936-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104838023-A |
| priorityDate | 1998-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.