| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f9a29d460e1ffaecddadb0d717a64d36 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S505-729
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N60-0268 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B9-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B11-00 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L39-24 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01G3-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B9-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B13-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01G1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B11-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B12-00 |
| filingDate |
1997-07-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0536203c9c25a02ab00a99849cc51618
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b11d58ef14c1e08f44a41995734b797a |
| publicationDate |
1999-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H1121126-A |
| titleOfInvention |
Manufacturing method of oxide superconducting bulk |
| abstract |
(57) [Summary]nPROBLEM TO BE SOLVED: To provide a large oxide superconductor having excellent characteristics and high uniformity. A method for manufacturing a conductive bulk is provided.nSOLUTION: Acid by melt growth method using seed crystal method A method for producing a bulk superconducting material, comprising: Two Cu Three O 7-Z Powder and RE Two BaCuO Five Or RE Four Ba Two Cu Two O Ten Raw material powder mixed with powder and platinum additive Preparing a precursor obtained by press-molding Maintainer temperature T 1 ° C (the melting point of the oxide superconducting bulk is t 1 ° C, t 1 + 20 ≦ T 1 ≤t 1 At +80) Uniform semi-melting by holding for a fixed time And the precursor has a melting point t 1 Crystal growth at a temperature of And a step. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2006011389-A1 |
| priorityDate |
1997-07-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |