http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H11204510-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38520f366e74704305b34fb93a81121e |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate | 1998-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b4343a6e1f747b7ed5743cc2a4387539 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_078e74fa9a33bc49d34628df72ca6cbe |
| publicationDate | 1999-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H11204510-A |
| titleOfInvention | Method for manufacturing semiconductor device and etching solution used in this method |
| abstract | An object of the present invention is to simplify a method of manufacturing a semiconductor device including a selective recess etching step and stably manufacture a high-quality semiconductor device. SOLUTION: At least an InGaAs layer and InAl A method of manufacturing a semiconductor device using a semiconductor substrate having a structure in which an As layer is stacked, including a step of etching an InGaAs layer stacked on the InAlAs layer, And, in the etching solution used in the step, 1) a mixed solution of monocarboxylic acid and hydrogen peroxide solution 2) Among the n carboxyl groups of the n-valent carboxylic acid, (n-1) carboxyl groups are A mixed solution of a neutralized salt aqueous solution and a hydrogen peroxide solution 3) A semiconductor device characterized by using one of a mixed solution of boric acid and a hydrogen peroxide solution, or a mixed solution comprising a combination thereof Is the way. |
| priorityDate | 1998-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.