http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H11200050-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-42
filingDate 1998-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7ee6f9f8685766f34928f65bf685c4a8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5394bfa5048ab3513855ca6254a4a092
publicationDate 1999-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H11200050-A
titleOfInvention Method for forming tungsten silicide film, method for manufacturing semiconductor device, and semiconductor wafer processing apparatus
abstract (57) Abstract: A stable tungsten silicide film having excellent characteristics for use in a semiconductor device is obtained. SOLUTION: A silicon wafer is placed in an inert gas atmosphere, the temperature is raised, and dichlorosilane is introduced to cause a surface reaction of the silicon wafer. WF 6 is added and introduced to deposit thin tungsten silicide on the silicon wafer. Next, WF 6 is stopped and dichlorosilane is introduced. Thereafter, WF 6 is introduced in addition to dichlorosilane to deposit tungsten silicide, thereby forming a tungsten silicide film.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002105638-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100430473-B1
priorityDate 1998-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05326480-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05209271-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H06163426-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H07111253-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0461169-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05182925-A
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419520437
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID457280313
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419526467
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419578708
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID522684
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID14917
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24823
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID457765275
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID16212546
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID61330
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559562
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419518429
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID977
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID784
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419523291
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID425762086
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559478
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23964

Total number of triples: 44.