http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H11200050-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-42 |
filingDate | 1998-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7ee6f9f8685766f34928f65bf685c4a8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5394bfa5048ab3513855ca6254a4a092 |
publicationDate | 1999-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-H11200050-A |
titleOfInvention | Method for forming tungsten silicide film, method for manufacturing semiconductor device, and semiconductor wafer processing apparatus |
abstract | (57) Abstract: A stable tungsten silicide film having excellent characteristics for use in a semiconductor device is obtained. SOLUTION: A silicon wafer is placed in an inert gas atmosphere, the temperature is raised, and dichlorosilane is introduced to cause a surface reaction of the silicon wafer. WF 6 is added and introduced to deposit thin tungsten silicide on the silicon wafer. Next, WF 6 is stopped and dichlorosilane is introduced. Thereafter, WF 6 is introduced in addition to dichlorosilane to deposit tungsten silicide, thereby forming a tungsten silicide film. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002105638-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100430473-B1 |
priorityDate | 1998-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 44.