| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
1998-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ee1c2087ace38fc466b0f4ae770104c0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f9924d8717db160d245a3682be116c0d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c6cba369e211e0f590917136bcf6685a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_389587c4007fca366ce1e43ef42e35ac |
| publicationDate |
1999-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H11195620-A |
| titleOfInvention |
Semiconductor device manufacturing method and sputtering apparatus |
| abstract |
(57) Abstract: A method of manufacturing a semiconductor device in which a high melting point metal silicide layer is formed, and a method of manufacturing a semiconductor device in which a high melting point metal is sputtered under conditions where deterioration of a gate breakdown voltage by a sputtering device does not occur. Provided is a sputtering apparatus. In the method, a refractory metal is deposited on the entire surface of a silicon substrate on which a gate electrode of a semiconductor element is formed to form a refractory metal film, and then heat-treated to form a refractory metal at an interface with the refractory metal film. When the metal silicide layer is formed, under the condition that the charge amount Q reaching the gate electrode is 5 C / cm 2 or less, A refractory metal film is sputter deposited by a magnetron sputtering device. Further, the sputtering device 30 has a collimator plate 32 made of a conductor having a large number of through holes penetrating from the target toward the wafer between the target holder 16 and the wafer holder 14 in a grounded state. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006074071-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-03008659-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9209074-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9051641-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010255048-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7202151-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003158091-A |
| priorityDate |
1997-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |