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filingDate 1997-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_98e6a59c7bd6f23275acd05094dddfff
publicationDate 1999-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H11186254-A
titleOfInvention Method for manufacturing semiconductor device
abstract (57) Abstract: When forming a dummy pattern between wirings, if a metal layer is used to reduce the number of steps, the capacity between wirings is increased. The number increases and the process becomes very complicated. SOLUTION: A base 10 having a step due to wiring 13 or the like. A photosensitive film 14 made of, for example, alkylsilanes, which generates a bond between silicon and oxygen by irradiating ultraviolet rays L (or an electron beam), is formed thereon, for example, to a thickness substantially equal to the height of the step. . Next, ultraviolet light L (or an electron beam) is irradiated to a predetermined position of the photosensitive film 14 formed in the recess 15 of the step to generate a bond between silicon and oxygen in the film, thereby forming the silicon oxide layer 14ox. Generate. Thereafter, the photosensitive film 14 other than the silicon oxide layer 14ox (unirradiated portion) is removed, so that the island-shaped insulating film pattern 16 made of the silicon oxide layer 14ox is formed in the recess 15 of the step. To form
priorityDate 1997-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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