http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H11177185-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6900162c0a64e321929e285aef793d73 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06 |
| filingDate | 1997-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f7e404930b1ae5d626e197e442fad43 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f57a79c600580b7e7f0cf6aa66567828 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7adead90955610bf0a82e77fe4e4ebbd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c858b16f1b78f083da251b33d04f552d |
| publicationDate | 1999-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H11177185-A |
| titleOfInvention | Gallium nitride based compound semiconductor laser |
| abstract | An object of the present invention is to improve the parallelism of an end face by reducing the warpage of a cavity of a semiconductor laser, reduce the oscillation threshold current density, and improve the luminous efficiency. In a semiconductor laser in which layers 2 to 9 made of a gallium nitride-based compound semiconductor are formed on an a-plane of a sapphire substrate, a length direction of a cavity is defined by a direction perpendicular to a c-axis of the sapphire substrate (m-axis) ). When a gallium nitride-based compound semiconductor is crystal-grown on the a-plane of the sapphire substrate 1, the semiconductor grows along the c-axis of the semiconductor. At this time, the substrate warps, but the warpage of the substrate surface is smallest in the m-axis direction. Therefore, if the cavity R is formed so that the optical axis is oriented in the m-axis direction on the a-plane, the parallelism of the both end surfaces S is increased. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001128926-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001128925-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003031895-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003101142-A |
| priorityDate | 1997-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.