| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2175de8bcadd3c1447a15ba8b57051c6 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate |
1998-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cd31d90728fc0affa3f1bcaf278842c6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5edfad53dbfd3dc559fe2b68d466f88e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ffa6f270da68995b1b6fb0b89a8b04a5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b9b2b45788a8f66b7b04ba6fdd975dc8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b3f22bba708eb8eed0459098bb18c9b5 |
| publicationDate |
1999-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H11176817-A |
| titleOfInvention |
Polysilicon etching method and its etching apparatus |
| abstract |
PROBLEM TO BE SOLVED: To provide a polysilicon etching method and an etching apparatus capable of performing isotropic etching without generating plasma. The method includes the steps of: loading a wafer having a polysilicon film formed on a specific film into a process chamber; adjusting pressure and temperature conditions of the process chamber within a set range; Supplying an etching gas into the process chamber 18 to etch the polysilicon film. Therefore, the polysilicon film can be easily etched using an etching gas such as a halogen compound gas and a NF 3 gas having a low binding energy. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005531479-A |
| priorityDate |
1997-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |