http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H1117280-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-227 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00 |
| filingDate | 1997-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0cb1f09dd44f188528f1de4ef1830d6f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c3e45a3bd735fc9d01e564220c8bd9da |
| publicationDate | 1999-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H1117280-A |
| titleOfInvention | Semiconductor laser and method of manufacturing the same |
| abstract | [Problem] AlGa oscillating with low threshold current and high efficiency Provided is an InP-based red semiconductor laser. SOLUTION: A real refractive index guided AlGa using AlInP, AlGaAs or the like as a buried layer (optical confinement layer 104). 2. A semiconductor laser according to claim 1, wherein the thickness (Xs) of the buried layer on the side surface of the mesa is at least three times the thickness (Xb) of the flat portion. For example, a low growth temperature (580-6 The growth rate of the mesa side surface is increased by growing the buried layer (104) under conditions such as 80 ° C. and a high V / III ratio (300 or more), so that the thickness of the mesa side surface is 3 A method for manufacturing a semiconductor laser that is grown twice as thick. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7796669-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002353566-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019169584-A |
| priorityDate | 1997-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.