| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a63dd6f8aae5fdad7cebfca9941ad084 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T436-25875
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N2291-0215
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N2291-02809 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N29-024
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N29-036
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N29-222 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N29-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N25-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N1-00 |
| filingDate |
1998-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c42d5c77a124c49bef2a269cc33d4e9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0a054a996043ac57445edd01b6403b06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_253d971da8939fd36d01a00ca49bc1ce |
| publicationDate |
1999-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H11172453-A |
| titleOfInvention |
Sound consumption monitor |
| abstract |
(57) Abstract: A method for determining the reaction efficiency of a chemical vapor deposition reactor in which a gas mixture enters a reactor and solid reaction products are deposited as thin films contained in the reactor. According to the invention, the composition of the inlet of the gas mixture can be controlled or measured, and a measuring device, such as an acoustic gas composition analyzer, calculates the gas composition at the outlet. From these parameters and known information about the reaction chemistry, the reaction efficiency can be derived. In addition, the reaction efficiency allows to determine the growth rate of the thin film as well as the associated rate of product exiting the reactor. |
| priorityDate |
1997-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |