| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1f1132cfcd850b4afa5da3f9e093c614 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-326
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-4007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R1-0466 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01R13-2421
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K7-1061
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R1-0483 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-40 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01R13-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01R33-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R1-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K7-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01R33-94 |
| filingDate |
1997-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8af0412d3fac09f79235299c121ade8a |
| publicationDate |
1999-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H11162601-A |
| titleOfInvention |
socket |
| abstract |
(57) [Abstract] [Problem] A narrow pitch B which does not cause connection failure during mounting. Provided is a socket suitable for measuring a GA semiconductor device. In a socket according to the present invention, a film substrate is disposed on a base, and a copper plug formed on the film substrate and a film contact formed by a concave portion inside the copper plug are formed on the film substrate. It is exposed on the bottom of the housing 31. When the BGA type semiconductor device 8 is accommodated in the accommodation portion 31 and the cover 16 is closed, the conductive balls 9 on the bottom surface of the semiconductor device 8 are pressed against the film contacts 81 and are electrically connected. Since the lowermost end of the conductive ball 9 is located in the recess, it does not collapse. Since the film contact 81 is formed by etching and plating, the pitch can be easily reduced. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101444774-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009158912-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/SG-100654-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-6062594-B1 |
| priorityDate |
1997-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |