http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H11157987-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_48ccd54a3001e53e9982db9a50929af0 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B15-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-30 |
| filingDate | 1997-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_10dcb6132124837d0da7221ddae1c7d2 |
| publicationDate | 1999-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H11157987-A |
| titleOfInvention | Crystal growing apparatus and crystal growing method |
| abstract | (57) [Summary] [PROBLEMS] To suppress facet growth even if the facet growth is strong such as gadolinium vanadate single crystal, the grown crystal has a certain cross-sectional shape, and is processed into a product. Another object is to obtain a large rare earth vanadate single crystal which is easy. SOLUTION: This crystal growing apparatus includes a die provided with a conduit for raising a raw material melt, and is used when growing a crystal by an EFG method, wherein an inclined surface is formed on an upper surface of the die. A crystal growing apparatus, wherein the inclined surface is formed so that an angle formed between the inclined surface and a facet growth surface of a grown crystal is within ± 15 °. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008201618-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018076193-A |
| priorityDate | 1997-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.