| abstract |
[PROBLEMS] To provide a highly sensitive negative photoresist material excellent in transparency and etching resistance, which is used for lithography using exposure light having a wavelength of 180 to 220 nm. SOLUTION: A negative photoresist material containing a polymer represented by the general formula (1) and having a weight average molecular weight of 1,000 to 500,000 and a photoacid generator which generates an acid upon exposure. Embedded image (In the above formula, R 1 , R 3 , and R 5 are a hydrogen atom or a methyl group, and R 2 is a bridged cyclic hydrocarbon group having 7 to 7 carbon atoms.) 18, a divalent hydrocarbon group, R 4 represents a hydrocarbon group having an epoxy group, and R 6 represents a hydrogen atom or a hydrocarbon group having 1 to 12 carbon atoms. X, y and z are x + y + z is an arbitrary number satisfying 0, 0 <x <1, 0 <y <1, and 0 ≦ z <1. ) |