http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H11147787-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6572cb234427884c68b50886151f47e7
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-06
filingDate 1997-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cbd6fee741405bacb7c19ea8b56be147
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2b2129e7ca66286812974c1189df1fef
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publicationDate 1999-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H11147787-A
titleOfInvention Epitaxial growth furnace
abstract (57) [Problem] To provide an epitaxial growth furnace capable of greatly reducing a temperature difference generated between the front and back of a wafer as compared with the conventional one while having a simple configuration in heating a wafer during epitaxial growth. SOLUTION: In an epitaxial growth furnace, a holding mechanism faces a pair of semiconductor wafers inside a reaction chamber such that the surfaces thereof face each other at an interval, and the back surface of each semiconductor wafer is exposed to an inner wall of the reaction chamber. And a pair of heaters for irradiating radiant heat to each back surface of the semiconductor wafer provided with a pair of heaters for irradiating radiant heat to each back surface of both semiconductor wafers.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014525135-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015533195-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015015479-A
priorityDate 1997-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
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Total number of triples: 20.