http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H11145558-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_60e21de07fa18fc54e2150daffc14654 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02B6-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026 |
| filingDate | 1997-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ef804cc5e4d7688c4404bb03eede3ed1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ee0ee1fea5df7e6a5524b7be5e79d9dc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_09974ff9dceeedfa17a9fd3edda39298 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e5fe5330abdaa5d9186ae2a92e75100 |
| publicationDate | 1999-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H11145558-A |
| titleOfInvention | Semiconductor optical device, transmission / reception module, and optical communication system |
| abstract | [PROBLEMS] To improve the mounting yield of semiconductor optical devices. A multiple quantum well active layer is formed on a semiconductor substrate, a ridge waveguide is formed on the multiple quantum well active layer, and cladding layers are formed on both sides of the ridge waveguide. A flattening layer 702 is formed on both sides of the ridge waveguide 105 of the layer 701, and a silicon oxide film 106 is formed on both side walls of the ridge waveguide 105, on the cladding layer 701 and on the flattening layer 702. An upper electrode 107 connected to the ridge waveguide 105 is formed on 106, a solder 110 is formed on the upper electrode 107, a convex portion 703 is formed on both sides of the stripe-shaped convex portion 111, and a convex portion 703 is formed. The distance from the surface of the semiconductor substrate 101 to the projection surface is substantially equal to the distance from the surface of the semiconductor substrate 101 to the projection surface of the stripe-shaped protrusion 111. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009027205-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6771676-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7260130-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107408790-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018503979-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7843983-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2005091454-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009188435-A |
| priorityDate | 1997-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.