http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H11143078-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-033 |
| filingDate | 1997-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e70ee57495466fe033e4b22ea9c97f01 |
| publicationDate | 1999-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H11143078-A |
| titleOfInvention | Chemical amplification resist |
| abstract | PROBLEM TO BE SOLVED: To provide a chemically amplified resist which is excellent in resolution performance of the resist due to a high dissolution contrast of the chemically amplified resist and therefore enables high integration of a semiconductor device. SOLUTION: In a chemically amplified positive resist comprising at least a polyhydroxystyrene resin whose polarity is changed by an acid catalyst and a photoacid generator, a chemically amplified system having a protective group in which the photoacid generator is decomposed by an acid catalyst reaction. Resist. |
| priorityDate | 1997-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.