http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H11131246-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1af8df51ce24ca931ae718fb747f6aa0 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03G5-082 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03G5-08 |
| filingDate | 1997-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e8298680bf7fc3f0063af2f45131c3b5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_87d2143c0ec81fd7bf3714aa78a28386 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_93d9ccebf6afe500a0a91036f616c13c |
| publicationDate | 1999-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H11131246-A |
| titleOfInvention | Plasma CVD apparatus and method for forming deposited film by plasma CVD |
| abstract | (57) [Abstract] (with correction) [PROBLEMS] A plasma capable of efficiently forming a deposited film of a high-quality semiconductor device or the like having a very uniform film thickness and a uniform film quality on a large-sized substrate at a high speed and efficiently. Provided is a CVD apparatus. The apparatus includes a reaction vessel capable of reducing pressure, a source gas supply unit for supplying a source gas, a substrate holding unit, a cathode electrode, and a high-frequency power source, and supplies the high-frequency power generated by the high-frequency power source to the cathode electrode. And a plasma CVD apparatus for generating plasma between the substrate and the cathode electrode held by the substrate holding means and forming a deposited film on the substrate, wherein the cathode electrode is positioned at at least one position. , An inner conductor composed of a plurality of rod-shaped conductor members coaxially coupled by a dielectric member, a dielectric covering the inner conductor partially or entirely, and a capacitive coupling of the inner conductor And at least one outer conductor formed of a single or a plurality of annular conductor members disposed on the outer periphery of the dielectric material corresponding to the spot. |
| priorityDate | 1997-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.