http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H11126908-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7acd9416af412b5972feb55a5e652ea2 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01P15-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-84 |
| filingDate | 1997-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ecd4ad83eda60dc04408ade30e610833 |
| publicationDate | 1999-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H11126908-A |
| titleOfInvention | Manufacturing method of semiconductor acceleration sensor |
| abstract | (57) [Problem] To provide a method of manufacturing a semiconductor acceleration sensor capable of accurately forming a thickness of a bent portion. SOLUTION: A step of forming a porous silicon region 3 extending outward from at least a part of an outer edge of a central portion 1a of the silicon substrate 1 on one main surface of the silicon substrate 1 having one main surface and two main surfaces; A step of forming the epitaxial layer 4 on one main surface of the silicon substrate 1 with a thickness corresponding to the bending portion 15 which bends when an acceleration is applied; and a step of forming a piezoresistor at a predetermined position on the surface of the silicon substrate 1 where the epitaxial layer 4 is formed. 6 and a step of forming the diffusion wiring 7, and a portion corresponding to the outer peripheral edge of the weight portion 16 that bends the bending portion 15 when an acceleration is applied is anisotropically etched from the two main surface sides of the silicon substrate 1 to form a porous layer. A step of forming the notch 11 reaching the silicon region 3, and removing the porous silicon region 3 through the notch 11 by isotropic etching, and contacting the center of the weight 16. Subsequently, a bending portion 15 whose both ends are supported by the frame 14 is formed by the epitaxial layer 4. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003014777-A |
| priorityDate | 1997-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.